IGC114T170S8RM e dited by in fineon technologies , ifag ipc td vls , l7 78 3 o , l7783t, l7783e, edition 0.9 , 27 .0 6 .20 14 igbt 3 power chip features : ? ? ? ? ? this chip is used for: ? applications: ? chip type v ce i c die size package igc114 t1 7 0 s8rm 17 00v 100 a 9 . 47 x 1 2 . 0 8 mm 2 sawn on foil mechanical p arameter s raster size 9 . 47 x 1 2 . 0 8 mm 2 emitter pad size (incl. gate pad) 7 . 254 x 9 .8 58 gate pad size 1.674 x 0.8 99 area total 114.4 thickness 1 90 m wafer size 200 mm max.po ssible chips per wafer 2 25 passivation frontside photoimide pad metal 3200 nm alsicu backside metal ni ag C system suitable for epoxy and soft solder die bonding die bond e lectrically conductive glue or solder wire bond al, <500m reject i nk dot s ize ? 0.65mm ; max 1.2mm recommended storage e nvironment s tore in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23c g c e
IGC114T170S8RM e dited by in fineon technologies , ifag ipc td vls , l7 78 3 o , l7783t, l7783e, edition 0.9 , 27 .0 6 .20 14 maximum r atings parameter symbol value unit collector - e mitter voltage , t vj =25 ? c v ce 17 00 v dc collector current, limited by t vj max i c 1 ) a pulsed collector current, t p limited by t vj max i c , p u l s 300 a gate emitter voltage v ge ? 20 v j unction temperature range t vj - 40 ... +175 c o perating junction temperature t vj - 40 ...+150 ? c short circuit data 2 ) v ge = 15v, v cc = 1 0 00v, t vj = 150c t sc 10 s reverse bias safe operating area 2 ) (rbsoa) i c , m a x = 20 0a, v c e , m a x = 17 00v t vj ? 150 c 1 ) depending on thermal properties of assembly 2 ) not subject to production test - verified by design/characterization static c haracteristic (tested on wafer ), t vj =25 ? parameter symbol conditions value unit min. typ. max. collector - e mitter breakdown voltage v (br)ces v ge =0v , i c = 2 ma 17 00 v co llector - e mitter saturation voltage v ce sat 3) v ge =15v, i c =10 0 a 1. 6 1. 9 2. 2 gate - e mitter threshold voltage v ge(th) i c = 4 ma , v ge = v ce 5. 2 5.8 6. 4 zero gate voltage collector current i ces v ce =17 00v , v ge =0v 5.6 a gate - e mitter leakage current i ges v ce =0v , v ge =2 0v 3 00 na integrated gate resistor r g 7 .5 ? 3) vcesat tested at lower current dynamic c haracteristic ( not subject to production test - verified by design / characterization ) , t vj =25 ? parameter symbol conditions va lue unit min. typ. max. input capacitance c i e s v ce = 25 v , v ge = 0v , f = 1 mh z 90 00 pf reverse transfer capacitance c r e s 29 0
IGC114T170S8RM e dited by in fineon technologies , ifag ipc td vls , l7 78 3 o , l7783t, l7783e, edition 0.9 , 27 .0 6 .20 14 further e lectrical c haracteristic switching characteristics and thermal properties are depending strongly on module desig n and mounting technology and can therefore not be specified for a bare die.
IGC114T170S8RM e dited by in fineon technologies , ifag ipc td vls , l7 78 3 o , l7783t, l7783e, edition 0.9 , 27 .0 6 .20 14 chip d rawing e = emitter g = gate t = test pad do not contact e g t e e e
IGC114T170S8RM e dited by in fineon technologies , ifag ipc td vls , l7 78 3 o , l7783t, l7783e, edition 0.9 , 27 .0 6 .20 14 description aql 0,65 for visual inspection according to failure catalogue electrostatic discharge s ensitive device according to mil - std 883 revision h istory version subjects (major changes since last revision) date published by infineon technologies ag 81726 munich, germany ? 2014 infineon technologies ag all rights reserved. legal disc laimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the applicati on of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non - infringement of intellectual property rights of any third party. information for further informati on on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www. infineon.com ) . warnings due t o technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. the infineon technologies component described in this data sheet may be used in life - s upport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - suppor t, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protec t human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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